RAMAN, X-RAY AND ELECTRICAL-PROPERTIES OF MOD PZT PLZT THIN-FILMS/

Ferroelectric PZT/PLZT thin alms have been fabricated using the metall o-organic precursor compounds. The structural development, spectroscop ic and dielectric properties of these films have been investigated usi ng atomic force microscopy (AFM), X-ray diffraction, Raman scattering and dielectric measurements. Experimental results show that Raman spec troscopy is an effective tool of monitoring the structural development of the small sized PZT films in the tetragonal phase field. Dielectri c characteristics have been improved by the rapid thermal processing a pproach. A rosette growth model is proposed to explain the observation of the tri-intersection of the perovskite phase in PZT films.