EFFECTS OF OXIDANTS ON THE DEPOSITION AND DIELECTRIC-PROPERTIES OF THE SRTIO3 THIN-FILMS PREPARED BY LIQUID SOURCE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION (MOCVD)

SrTiO3 thin films are deposited by a liquid source metal-organic chemi cal vapor deposition (MOCVD). The effects of oxidants on the depositio n characteristics and dielectric properties of the films are mainly te sted, O-2, N2O and O-2 + N2O gases are used as the oxidants and the fi lms with Ti-rich and Sr-rich compositions are obtained when O-2 and N2 O is used, respectively. Deposition of thin initial layer under O-2 at mosphere is very effective to obtain large dielectric constant of the SrTiO3 thin film when the main layer is deposited under O-2 + N2O atmo sphere. The dielectric constants of 40 nm thick SrTiO3 films with thin O-2, N2O initial layers and without the initial layers are 235, 145 a nd 210, respectively.