ELECTRICAL-PROPERTIES OF PARAELECTRIC PLT-(28) THIN-FILMS DEPOSITED BY DC MAGNETRON SPUTTERING

Paraelectric [Pb, La]TiO3 (PLT, La = 28 mol%) thin films were prepared by de magnetron sputtering using a multi-element metal target. In ord er to crystallize the as-deposited PLT thin films into the cubic perov skite structure, a heat treatment was applied at annealing temperature s ranging between 450 and 750 degrees C. The electrical measurements s uch as dielectric proper ties, polarization-electric field (P-E), and current-voltage (I-V) were investigated with the change of annealing t emperature. The dielectric constant and dissipation factor of paraelec tric PLT film annealed at 750 degrees C were 1216 and 0.018, respectiv ely. The charge storage density was approximately 12.5 mu/cm(2). The l eakage current density in PLT film annealed at 650 degrees C was aroun d 0.1 mu A/cm(2) at the electric field of 0.25 MV/cm.