PREPARATION OF ZR-RICH PZT AND LA-DOPED PBTIO3 THIN-FILMS BY RF MAGNETRON SPUTTERING AND THEIR PROPERTIES FOR PYROELECTRIC APPLICATIONS

Zr-rich PZT and La-doped PT films were fabricated on a PLT/Pt/Ti/SiO2/ Si or Pt/Ti/SiO2/Si substrate by an RF planar magnetron sputtering equ ipment using powder targets with compositions of PbZr0.94Ti0.06O3, PbZ r0.92Ti0.08O3 and Pb0.85La0.15Ti0.96O3 with excess PbO of 20 mol%. The dielectric constants of PZT and PLT films showed anomalies at the tra nsition temperatures of around 246 and 300 degrees C, and their dielec tric constants at room temperature were 350 and 1070, respectively. Si gnificant pyroelectric currents were observed in both as-grown PZT and PLT films even without a poling treatment. The pyroelectric coefficie nts of those films were 10 and 30 nC/cm(2)K, respectively. Therefore, Zr-rich PZT and [111]-oriented PLT films sputtered on Pt/Ti/SiO2/Si su bstrates possess desirable properties for potential applications to py roelectric devices.