Jm. Myoung et al., EFFECT OF GROWTH TEMPERATURE ON THE PROPERTIES OF P-TYPE GAN GROWN BYPLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 182(3-4), 1997, pp. 241-246
p-type GaN films were grown at two different temperatures, 650 and 700
degrees C, by plasma-assisted molecular beam epitaxy (PAMBE) using a
radio frequency (RF) plasma source. High hole concentrations of the or
der of 10(18) cm(-3) were achieved for both films without any post-gro
wth treatment. For (0 0 0 2) diffraction from the p-type films grown a
t 700 degrees C, the full-width at half-maximum (FWHM) of the double-c
rystal X-ray rocking curve was 7.8 arcmin, the smallest ever reported
for p-type GaN films grown on sapphire substrates. The room-temperatur
e photoluminescence (PL) measurements on both films showed that band e
dge emission at 365 nm dominated the PL spectra of the films grown at
700 degrees C, while emission at 413 nm, associated with deep Mg compl
exes, dominated those of the films grown at 650 degrees C. The films g
rown at 700 degrees C showed better crystalline quality and optical pr
operties than those grown at 650 degrees C.