GROWTH OF ALLOY GAINP CRYSTALS BY COMPOSITIONAL CONVERSION OF INP LAYERS GROWN ON GAP SUBSTRATES IN AN LPE SYSTEM

GaInP alloy layers with desired compositions were grown on GaP substra tes using the compositional conversion technique. An InP layer grown o n a GaP substrate was brought into contact with a Ga-In-P saturated so lution and kept at a constant temperature in isothermal conditions. A relatively good GaInP layer was obtained. Furthermore, to have a bette r understanding of this mechanism, a solid-liquid diffusion numerical simulation model was applied. Numerical solutions agree with experimen tal results and explain well the conversion phenomenon.