Inspecting critically the former vapour growth technique of C-60 singl
e crystals from the viewpoint of crystal growth dynamics, we conclude
that the conditions should be improved. Both the temperature differenc
e distribution throughout the growth process and the temperature distr
ibution in the furnace are carefully selected. With this optimization,
large C-60 single crystals of good quality with size more than 6 mm c
an be grown reproducibly. The Laue's analysis of the crystal show that
the exposed surfaces of C-60 solids are of two types of crystalline f
aces, namely {111} and {100}.