CVD PROCESS FOR COPPER INTERCONNECTION

A complete optimisation of a Cu-MOCVD process was performed in an indu strial cluster tool fitted for 200 mm silicon wafers. Blanket Cu layer deposition rate over 200 nm/min was achieved using liquid Cu(hfac)vtm s precursor with a direct liquid injection system. The major issues co ncerning the process integration for fabrication of Cu interconnects c apped by a thin TiN-MOCVD barrier layer in a dual damascene architectu re were successfully addressed. Void free filling of aggressive line a nd via structures was performed at high deposition rate. Good adhesion between the Cu metallisation and the TiN barrier required for Cu Chem ical Mechanical Polishing was obtained using a post Copper deposition thermal treatment.