CONFORMAL COPPER DEPOSITION IN DEEP TRENCHES

For use as metallization in CMOS device fabrication, we established a single wafer CVD copper deposition process using CupraSelect(R) (Schum acher) as a precursor. We utilized a direct liquid injection system in cluding an HPLC pump. The dependence of film properties upon temperatu re and pressure is described. The CVD process is suitable for conforma l filling of 16 mu m deep via holes with an aspect ratio of 8. The mea sured film resistivity is 1.95 mu Omega cm as deposited and is reduced to 1.86 mu Omega cm after an annealing step.