INTEGRATION EVALUATION OF LOW PERMITTIVITY SILICON-BASED SPIN ON MATERIALS AS IMD

Authors
PIRES F NOEL P LECORNEC C PASSEMARD G LOUIS D LAJOINIE E
Citation
F. Pires et al., INTEGRATION EVALUATION OF LOW PERMITTIVITY SILICON-BASED SPIN ON MATERIALS AS IMD, Microelectronic engineering, 37-8(1-4), 1997, pp. 277-284
Citations number
4
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
37-8
Issue
1-4
Year of publication
1997
Pages
277 - 284
Database
ISI
SICI code
0167-9317(1997)37-8:1-4<277:IEOLPS>2.0.ZU;2-Z
Abstract
The integration capability of non-etchback Silicon Based Spin on Mater ials has been studied. The via degradation due to the resist stripping was particularly evaluated. The metal barrier adhesion and the dielec tric constant evolution after the chemical treatment and annealing wer e also evaluated. Some solutions to integrate these materials were pro posed.