FORMATION OF AL3TI DURING PHYSICAL VAPOR-DEPOSITION OF TITANIUM ON ALUMINUM

Authors
ULMER L PITARD F PONCET D DEMOLLIENS O
Citation
L. Ulmer et al., FORMATION OF AL3TI DURING PHYSICAL VAPOR-DEPOSITION OF TITANIUM ON ALUMINUM, Microelectronic engineering, 37-8(1-4), 1997, pp. 381-387
Citations number
4
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
37-8
Issue
1-4
Year of publication
1997
Pages
381 - 387
Database
ISI
SICI code
0167-9317(1997)37-8:1-4<381:FOADPV>2.0.ZU;2-2
Abstract
In this study, the kinetics of Al3Ti formation during full sheet Ti/Al bilayer annealing has been investigated. Two characterisation methods have been developed. The first one was based on full sheet resistance measurements and the second one on Wavelength Dispersive X-Ray Fluore scence spectroscopy. For both methods, a model of the thickness of the Al3Ti layer formed versus annealing time and temperature was obtained using a centred composite design of experiment. Then, the effect of a soft sputter etch on the Al surface before Ti deposition was investig ated in order to be representative of classical via filling processing , and Al3Ti formation during Ti physical vapour deposition was obtaine d.