THERMAL-STABILITY OF THIN COSI2 LAYERS GROWN ON AMORPHOUS-SILICON

The thermal stability of thin cobalt silicide layers grown on amorphou s silicon deposited by chemical vapor deposition has been studied in t he temperature range between 950 and 1100 degrees C. The relation betw een the agglomeration process and the increase of the sheet resistance has been evidenced. The range of thermal stability of the silicide is reduced if the CVD amorphous silicon is previously implanted with Si ions. The occurrence of some epitaxial CoSi2 grains in the case of CVD amorphous Si can account for this difference.