THERMAL-OXIDATION OF GALLIUM-ARSENIDE IN HUMID NITROGEN(I) OXIDE

Authors
MITTOVA IY LAVRUSHINA SS PSHESTANCHIK VR NOVIKOVA OY
Citation
Iy. Mittova et al., THERMAL-OXIDATION OF GALLIUM-ARSENIDE IN HUMID NITROGEN(I) OXIDE, Inorganic materials, 33(12), 1997, pp. 1227-1229
Citations number
5
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
12
Year of publication
1997
Pages
1227 - 1229
Database
ISI
SICI code
0020-1685(1997)33:12<1227:TOGIHN>2.0.ZU;2-4
Abstract
The oxidation kinetics of gallium arsenide in a humid nitrogen(I) oxid e atmosphere and the composition of the resulting films were studied. The presence of N2O has no effect on the rate of oxide film growth com pared to oxidation in humid oxygen but increases arsenic content of th e films, which improves their electrical properties, The oxidation kin etics of GaAs depends to a significant degree on the way in which N2O is introduced into the oxidizing atmosphere.