ELECTRICAL AND OPTICAL-PROPERTIES OF HFO2-ND2O3 DIELECTRIC FILMS

HfO2-Nd2O3 dielectric films were produced by vacuum electron-beam evap oration, and their electrical properties were studied as a function of composition. C-V measurements were used to calculate parameters of th e films and semiconductor-dielectric interfaces. The films exhibit hig h thermal stability in electric fields. The effect of stabilizing trea tment on the optical properties of the films is examined. The films ar e believed to have great potential for use in thin-film electrolumines cent devices and thermally stable capacitors.