CHARACTERIZATION OF AL-Y ALLOY THIN-FILMS DEPOSITED BY DIRECT-CURRENTMAGNETRON SPUTTERING

Thin films of Al-1.27 wt%Y were deposited by dc magnetron sputtering. Adding yttrium to the aluminum drastically reduced the metal's grain s ize and also improve the uniformity of grain size distribution. Upon a nnealing at a temperature of 450 degrees C for 30 min, grain growth wa s insignificant, while the electrical resistance dropped from 6.05 to 2.95 mu Omega cm. The as deposited films consisted of Al4Y and alpha-A l supersaturated with yttrium. After annealing, beta-Al3Y precipitated instead of alpha-Al3Y. The Al-Y films had much higher resistance to h illock formation than did Al-1 wt %Si films. (C) 1997 American Vacuum Society.