SURFACE MODIFICATION OF INP BY DIFFRACTION-PATTERNING UTILIZING LASERDRY-ETCHING

Laser based dry etching of semiconductors offers a useful way of integ rating patterning with growth for optoelectronic device development. I n this article we demonstrate XeCl excimer laser based dry etching of InP. Experiments were carried out using a 10% gas mixture of chlorine diluted in helium. Studies were made of the effect of laser fluence on the etching process and how this influences pattern development. Base d on these studies, surface electromagnetic waves were used to form ri pple patterns and the optimum conditions for interference pattern deve lopment are reported, These studies show that a relatively low fluence is not conducive to pattern development. We also utilize diffraction from slits of different shapes in tandem with laser dry etching for th e patterning of structures in semiconductors. This technique offers th e potential to develop relatively damage-free structures. These struct ures may be suitable for devices used in a number of applications such as telecommunications. (C) 1997 American Vacuum Society.