POTENTIALS AND CHALLENGES FOR LITHOGRAPHY BEYOND 193 NM OPTICS

Authors
Citation
J. Canning, POTENTIALS AND CHALLENGES FOR LITHOGRAPHY BEYOND 193 NM OPTICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2109-2111
Citations number
NO
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2109 - 2111
Database
ISI
SICI code
1071-1023(1997)15:6<2109:PACFLB>2.0.ZU;2-N
Abstract
The growth of the semiconductor industry continues to be driven to a l arge extent by steady advances in microlithography. Renewal of the Sem iconductor Industry Association Roadmap is underway and accelerating r equirements are predicted. The 130 nm generation is anticipated to be available in the year 2003, but the path to get there is not obvious. To meet the needs of its members, SEMATECH is embarking on a program t o explore and narrow the technology options on the roadmap. The goal i s to make a data-driven decision by late 1997. As an introduction to t his Special Session on 0.13 Micron Lithography for Manufacturing, this article reviews the Lithography Technology Working Group requirements and potential solutions for roadmaps. The SEMATECH program to narrow the options beyond 193 nm optics is presented in detail, including the critical issues for each technology. (C) 1997 American Vacuum Society .