DEEP-SUBMICRON RESIST PROFILE SIMULATION AND CHARACTERIZATION OF ELECTRON-BEAM LITHOGRAPHY SYSTEM FOR CELL PROJECTION AND DIRECT WRITING

In this article we report the experimental data of chemically amplifie d resists (CARs) used in fabrication of deep submicron pattern delinea tion using electron beam lithography, and propose a reliable simulatio n method that fits the experiment results well. CAR is proven to have high resolutions of 150 nm for a 70 nm diameter Gaussian beam at 30 ke V, and 125 nm for various shaped beams at 50 keV. The sensitivity to p rocess parameters of CAR can be reduced by finding the optimum experim ent condition for the best resist profiles. To make the simulation res ults more realistic, we applied the ray tracing method to the developm ent simulator especially appropriate for CAR. Also, we modified the co nventional hybrid scattering model to include the inelastic scattering and to take the low energy lithography into account. (C) 1997 America n Vacuum Society.