RESIST PROCESSES FOR LOW-ENERGY ELECTRON-BEAM LITHOGRAPHY

Authors
SCHOCK KD PRINS FE STRAHLE S KERN DP
Citation
Kd. Schock et al., RESIST PROCESSES FOR LOW-ENERGY ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2323-2326
Citations number
9
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2323 - 2326
Database
ISI
SICI code
1071-1023(1997)15:6<2323:RPFLEL>2.0.ZU;2-4
Abstract
Low-energy electron-beam lithography processes have been studied, a ne w resist system has been proposed, and preliminary tests have been per formed. The interaction between electrons and e-beam resist and its ef fect on the exposure dose and the penetration depth of the electrons h ave been studied as a function of electron energy. A silylation proces s for low energy e-beam lithography has been tested and applied to a n ew bilayer resist scheme for low-energy electron-beam exposure. (C) 19 97 American Vacuum Society.