USE OF ATTENUATED PHASE MASKS IN EXTREME-ULTRAVIOLET LITHOGRAPHY

Authors
WOOD OR WHITE DL BJORKHOLM JE FETTER LE TENNANT DM MACDOWELL AA LAFONTAINE B KUBIAK GD
Citation
Or. Wood et al., USE OF ATTENUATED PHASE MASKS IN EXTREME-ULTRAVIOLET LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2448-2451
Citations number
16
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2448 - 2451
Database
ISI
SICI code
1071-1023(1997)15:6<2448:UOAPMI>2.0.ZU;2-N
Abstract
We have used an attenuated phase mask, a mask with a rr-phase shifting attenuator, in extreme ultraviolet lithography at 13.9 nm wavelength to produce resist profiles with sharper, more vertical sidewalls. (C) 1997 American Vacuum Society.