MASK BLANKS FOR EXTREME-ULTRAVIOLET LITHOGRAPHY - ION-BEAM SPUTTER-DEPOSITION OF LOW DEFECT DENSITY MO SI MULTILAYERS/

Authors
KEARNEY PA MOORE CE TAN SI VERNON SP LEVESQUE RA
Citation
Pa. Kearney et al., MASK BLANKS FOR EXTREME-ULTRAVIOLET LITHOGRAPHY - ION-BEAM SPUTTER-DEPOSITION OF LOW DEFECT DENSITY MO SI MULTILAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2452-2454
Citations number
5
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2452 - 2454
Database
ISI
SICI code
1071-1023(1997)15:6<2452:MBFEL->2.0.ZU;2-B
Abstract
We report on the growth of low defect density Mo/Si multilayer (ML) co atings. The coatings were grown in a deposition system specifically de signed for extreme ultraviolet lithography mask blank fabrication. Com plete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm diam (100) oriented Si wafer substrates using ion beam sputter deposition. Process added defect densities correspond to 2x10(-2)/cm(- 2) larger than 0.13 mu m as measured by optical scattering. This repre sents a reduction in defect density of Mo/Si ML coatings by a factor o f 10(5). (C) 1997 American Vacuum Society.