X-RAY MICROFABRICATION AND NANOFABRICATION USING A LASER-PLASMA SOURCE AT 1 NM WAVELENGTH

Citation
Ice. Turcu et al., X-RAY MICROFABRICATION AND NANOFABRICATION USING A LASER-PLASMA SOURCE AT 1 NM WAVELENGTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2495-2502
Citations number
3
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2495 - 2502
Database
ISI
SICI code
1071-1023(1997)15:6<2495:XMANUA>2.0.ZU;2-#
Abstract
A picosecond excimer laser-plasma source has been constructed, which g enerates an x-ray average power of 2.2 and 1.4 W at the wavelengths re quired for proximity x-ray lithography: 1.4 nm (steel target) and 1 nm (copper target), respectively. The plasma source could be scaled to t he 50-75 W x-ray average power required for industrial lithographic pr oduction by scaling the total average power of the commercial excimer laser system up to 1 kW. The 1 nm x-ray source is used to micromachine a 2.5 THz microwave waveguide-cavity package with a 48 mu m deep, thr ee-dimensional structure, using the LIGA technique. The 1 nm x-ray sou rce is also used to print 180 nm long transistor gates in the fabricat ion process of field-effect transistors. (C) 1997 American Vacuum Soci ety.