DIRECT MEASUREMENT OF THE EFFECT OF SUBSTRATE PHOTOELECTRONS IN X-RAYNANOLITHOGRAPHY

Citation
Djd. Carter et al., DIRECT MEASUREMENT OF THE EFFECT OF SUBSTRATE PHOTOELECTRONS IN X-RAYNANOLITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2509-2513
Citations number
25
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2509 - 2513
Database
ISI
SICI code
1071-1023(1997)15:6<2509:DMOTEO>2.0.ZU;2-K
Abstract
We measure the dissolution rate of poly(methylmethacrylate) (PMMA) as a function of height above substrates of silicon and thin films suitab le as bases for gold electroplating: a ''thick-gold'' film (10 nm Ti/1 0 nm Au), and a ''thin-gold'' film (10 nm Ti/1.8 nm Au). For the thick -gold film, a dramatic increase is seen in the PMMA dissolution rate s tarting approximately 50 nm above the substrate. This is attributed to increased x-ray absorption and photoelectron generation in the thick gold. An increased dissolution rate is not seen for the other two subs trates. Our measurements are compared with simulations and with our ex perience in replicating sub-50-nm device structures. We point out two consequences of this increased exposure due to substrate-generated ele ctrons. The first is an increased exposure rate near the resist/substr ate interface which can lead to development at the interface in the da rk areas. The second is an increase in exposure near a resist/substrat e interface at the boundary between shadowed and unshadowed regions, l eading to an undercut in the resist profile. (C) 1997 American Vacuum Society.