RESIST DESIGN CONCEPTS FOR 193 NM LITHOGRAPHY - OPPORTUNITIES FOR INNOVATION AND INVENTION

Photolithography using 193 nm radiation is the leading candidate for t he manufacture of 0.18-0.13 mu m design rule devices. The optical abso rption of materials such as novolacs, and functionalized poly(hydroxys tyrenes) and styrene-acrylate copolymers which are the matrix material s of choice for G line, I line, and 248 nm lithography is significantl y higher than one at 193 nm making them too opaque to be useful at thi s shorter wavelength. The opacity of the current photoresists at 193 n m requires innovation in designing alternative materials and processes to realize the full potential of 193 nm (ArF) lithography. From a mat erials standpoint, this challenge must be addressed by new chemistries and process schemes capable of providing resists with the aqueous bas e solubility, etching resistance, resolution, photospeed, and process latitude required for large-scale manufacturing. In addition, regulato ry constraints on volatile organic chemical emissions have spurred eff orts to design revolutionary resist platforms that address these conce rns while providing the performance required for sub-0.18 mu m device manufacture. (C) 1997 American Vacuum Society.