DEEP-ULTRAVIOLET RESISTS AZ DX-561 AND AZ DX-1300P APPLIED FOR ELECTRON-BEAM AND MASKED ION-BEAM LITHOGRAPHY

This article reports work on two positive-tone deep ultraviolet chemic ally amplified resist (CAR) systems from HOECHST AG that were applied in two different lithographic processes: (i) the AZ DX-561 resist in s erial working direct-write scanning electron-beam lithography, and (ii ) AZ DX-1300P resist in a novel parallel working masked ion beam litho graphy. The main parameters of both CARs under the optimized processin g conditions for both lithographic processes were generally determined . The contrast of these resists was found to be > 10. The sensitivity of AZ DX-561 was about 12 mu C/cm(2) for 30 keV electrons, For AZ DX-1 300P, a sensitivity of 9 mu C/cm(2) was found for 30 keV electrons and 0.3 mu C/cm(2) for 80 keV He+ ions. Both resists showed excellent per formance for subsequent reactive ion etching. (C) 1997 American Vacuum Society.