W. Liu et al., NOVEL OBJECTIVE LENS FOR LOW-VOLTAGE ELECTRON-BEAM IMAGING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2737-2741
Low energy electron beams are increasingly being used in semiconductor
manufacturing for wafer and mask inspection because of their low leve
l of damage to the sample, and the reduced charging effects when the e
lectron energy is close to E-II where secondary electron yield is unit
y. Also due to the short range of the electrons with the sample and th
e reduced proximity effect, electron beams with even lower energies ar
e attractive for a variety of other applications such as surface studi
es, thin film microscopy, and lithography. However, achieving high res
olution and high secondary electron detection efficiency at 100 eV lan
ding energy and below meets serious electron optical challenges. To ad
dress this issue, we describe a low aberration objective lens that is
combined with an efficient secondary electron detector. The objective
lens has a final electrode just in front of the sample to minimize the
electric field at the sample surface. We have optimized the design fo
r minimum beam diameter and high secondary electron collection efficie
ncy, subject to constraints imposed by practical concerns, such as arc
ing. The lens was fabricated using a combination of conventional machi
ning and silicon micromachining. By inserting the lens into the sample
chamber of a traditional scanning electron microscope (SEM), we obtai
ned images of many kinds of samples at landing energies as low as 20 e
V. Resolution of better than 30 nm is achieved at 100 eV landing energ
y. The degradation from the expected resolution (17 nm) is in part due
to limitations imposed by the SEM resulting in a nonoptimal convergen
ce angle. At these very low energies the image is seen to be very sens
itive to contamination on the sample surface; this illustrates its pos
sible application for viewing ultrathin films. We have calibrated the
magnification versus landing energy relationship for the lens and carr
ied out detailed signal and noise analyses for the electronics system.
(C) 1997 American Vacuum Society.