WIRE-CHANNEL AND WRAP-AROUND-GATE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A SIGNIFICANT REDUCTION OF SHORT-CHANNEL EFFECTS

Metal-oxide-semiconductor field-effect transistors (MOSFETs) with a wi re-channel and wrap-around-gate (WW) structure were fabricated using e lectron beam lithography and reactive ion etching. The smallest device s have a 35 nm channel width, a 50 nm channel thickness, and a 70 nm c hannel length. Measurements showed that as the channel width of WW MOS FETs decreased from 75 to 35 nm short channel effects were significant ly reduced: the subthreshold slope decreased from 356 to 80 mV/dec and the drain-induced barrier lowering decreased from 988 to 129 mV. Furt hermore, the reduction of channel width increases the drive current pe r unit channel width. A multichannel WW MOSFET with a high current dri ving capability is discussed. (C) 1997 American Vacuum Society.