FABRICATION AND TRANSPORT STUDY OF FINITE LATERAL SUPERLATTICES

Authors
HANNAN M GRUNDBACHER R FAY P ADESIDA I GIANNETTA RW WAGNER CJ MELLOCH MR
Citation
M. Hannan et al., FABRICATION AND TRANSPORT STUDY OF FINITE LATERAL SUPERLATTICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2821-2824
Citations number
10
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2821 - 2824
Database
ISI
SICI code
1071-1023(1997)15:6<2821:FATSOF>2.0.ZU;2-V
Abstract
Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabri cated in high mobility GaAs/AlGaAs heterostructures with modulation pe riods in the range of 2000-3000 Angstrom and differing numbers of gate s. Conductance plateaus are observed at gate voltages where the thermo power is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are mu ch less than the basic quantum unit (2e(2)/h). (C) 1997 American Vacuu m Society.