SINGLE-ELECTRON TRANSISTOR AS A CHARGE SENSOR FOR SEMICONDUCTOR APPLICATIONS

Authors
BERMAN D ZHITENEV NB ASHOORI RC SMITH HI MELLOCH MR
Citation
D. Berman et al., SINGLE-ELECTRON TRANSISTOR AS A CHARGE SENSOR FOR SEMICONDUCTOR APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2844-2847
Citations number
7
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2844 - 2847
Database
ISI
SICI code
1071-1023(1997)15:6<2844:STAACS>2.0.ZU;2-Z
Abstract
We describe the use of aluminum single-electron transistors (SETs) to measure, with extremely high sensitivity, the fluctuation of charge in semiconductor quantum dots. Our method of fabricating SETs results in excellent reliability and reproducibility. (C) 1997 American Vacuum S ociety.