ACCURATE CRITICAL DIMENSION CONTROL BY USING AN AZIDE NOVOLAK RESIST PROCESS FOR ELECTRON-BEAM LITHOGRAPHY/

Nanofabrication with accurate critical dimension control was investiga ted with a nonchemically amplified resist. The resist consists of 3,3' -dimethoxy-4,4'-diazidobiphenyl and cresol novolak (novolak). By using novolak with a small weight-average molecular weight (Mw), small resi st surface roughness (nano edge roughness) was significantly suppresse d down to 3 nm. Nanofabrications of 20-nm lines and spaces (L and S) a nd 20-nm dot patterns had been demonstrated with the resist. The patte rn line-width linearity, the minimum size that the fabricated patterns width were equal to the designed ones, was also preserved down to 30- nm L and S. We investigated use of electron-beam/optical lithography t o enhance throughput in nanofabrication. Fine gate structure of 70 nm with a large pad was demonstrated with the hybrid exposure. (C) 1997 A merican Vacuum Society.