SUB-10 NM IMPRINT LITHOGRAPHY AND APPLICATIONS

New developments, further details, and applications of imprint lithogr aphy are presented. Arrays of 10 nm diameter and 40 nm period holes we re imprinted not only in polymethylmethacrylate (PMMA) on silicon, but also in PMMA on gold substrates. The smallest hole diameter imprinted in PMMA is 6 nm. All the PMMA patterns were transferred to a metal us ing a liftoff. In addition, PMMA mesa's of a size from 45 nm to 50 mu m were obtained in a single imprint. Moreover, imprint lithography was used to fabricate the silicon quantum dot, wire, and ring transistors , which showed the same behavior as those fabricated using electron (e )-beam lithography. Finally, imprint lithography was used to fabricate nanocompact disks with 10 nm features and 400 Gbits/in.(2) data densi ty-near three orders of magnitude higher than current critical dimensi ons (CDs). A silicon scanning probe was used to read back the data suc cessfully. The study of wear indicates that due to the ultrasmall forc e in tapping mode, both the nano-CD and the scanning probe will not sh ow noticeable wear after a large number of scans. (C) 1997 American Va cuum Society.