CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM

Authors
YANAGISAWA J NAKAYAMA H OKA K NAKAI M WAKAYA F YUBA Y TAKAOKA S MURASE K GAMO K
Citation
J. Yanagisawa et al., CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2930-2933
Citations number
15
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
2930 - 2933
Database
ISI
SICI code
1071-1023(1997)15:6<2930:COSLIG>2.0.ZU;2-E
Abstract
Effect of the regrowth temperature of the cap layer grown successively on a Si focused ion beam (FIB) implanted GaAs surface on the dopant a ctivation was investigated using a FIB/molecular beam epitaxy combined system. Indication of the reevaporation of the implanted Si was obser ved at high regrowth temperature and the fabrication process was impro ved by using low regrowth temperature. A high doping efficiency was ob tained for the ion dose at about 1 x 10(13) cm(-2). Present results in dicate the importance of controlling the regrowth condition to obtain high doping efficiency. (C) 1997 American Vacuum Society.