DISTRIBUTION OF RECOMBINATION CURRENTS IN THE SPACE-CHARGE REGION OF HETEROSTRUCTURE BIPOLAR-DEVICES

This paper addresses the problem of the space charge region Shackley-R ead-Hall (SRH) recombination currents in heterojunctions with one nonc rystalline side. A formulation which generalizes previous works is dis cussed, The approach is based on the drift-diffusion model with a ther mionic-field emission boundary condition, The main physical parameters which determine the relative contribution of each zone of the space c harge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crysta lline heterojunctions and design criteria are established to minimize the total recombination current.