IMPACT OF LOCAL-NEGATIVE-FEEDBACK ON THE MRS AVALANCHE PHOTODETECTOR OPERATION

Metal-Resistance-Semiconductor (MRS) photodetectors are characterized by a resistive layer placed in series to an avalanching region, In thi s paper, we report the characterization of such devices, we define a p arameter extraction procedure, and we derive a quantitative model of t he MRS operation, Due to the presence of the ohmic layer, the detector works as an ensemble of pixels with separately stabilized operating b ias, In this way, compared to avalanche photodiodes (APD's), MRS achie ve superior gain uniformity with the same sensitive area, However, the re are still aspects of the fabrication technology and of the detector structure which have to be improved.