THIN-FILM QUASI-SOI POWER MOSFET FABRICATED BY REVERSED SILICON-WAFERDIRECT BONDING

A quasi-SOI power MOSFET has been fabricated by reversed silicon wafer direct bonding. In this power MOSFET, the buried oxide under the chan nel and source regions is removed and the channel region is directly c onnected to the source body contact electrode to reduce the base resis tance of the parasitic npn bipolar transistor, The quasi-SOI power MOS FET can suppress the parasitic bipolar action and shows lower specific on-resistance than that of the conventional SOI power MOSFET. The fab ricated chip level quasi-SOI power MOSFET shows the specific on-resist ance of 86 m Ohm.mm(2) and on-state breakdown voltage of 30 V.