PHYSICALLY-BASED MODEL OF THE EFFECTIVE MOBILITY IN HEAVILY-DOPED N-MOSFETS

Authors
VILLA S LACAITA AL PERRON LM BEZ R
Citation
S. Villa et al., PHYSICALLY-BASED MODEL OF THE EFFECTIVE MOBILITY IN HEAVILY-DOPED N-MOSFETS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 110-115
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
110 - 115
Database
ISI
SICI code
0018-9383(1998)45:1<110:PMOTEM>2.0.ZU;2-P
Abstract
We present a new analytical mobility model for channel electrons in he avily-doped MOSFET's biased from weak to strong inversion suitable for implementation in device simulation codes. The model accounts for the two-dimensionality of the electron gas and for the effect of charge t rapping on the measurements and has been validated by comparing the th eoretical curves with an extensive set of mobility measurements perfor med on devices with channel doping ranging from 3.8 x 10(17) to 1.25 x 10(18) cm(-3) over a wide bias and temperature range (141-400 K).