PHYSICAL MODELING OF TEMPERATURE DEPENDENCES OF SOI CMOS DEVICES AND CIRCUITS INCLUDING SELF-HEATING

To simulate and examine temperature and self-heating effects in Silico n-On-Insulator (SOI) devices and circuits, a physical temperature-depe ndence model is implemented into the SOISPICE [1] fully depleted (FD) and nonfully depleted (NFD) SOI MOSFET models, Due to the physical nat ure of the device models, the temperature-dependence modeling, which e nables a device self-heating option as well, is straightforward and re quires no new parameters, The modeling is verified by de and transient measurements of scaled test devices, and in the process physical insi ght on Boating-body effects in temperature is attained, The utility of the modeling is exemplified with a study of the temperature and self- heating effects in an SOI CMOS NAND ring oscillator, SOISPICE transien t simulations of the circuit, with Boating and tied bodies, reveal how speed and power depend on ambient temperature, and they predict no si gnificant dynamic self-heating, irrespective of the ambient temperatur e.