AN IMPROVED MOSFET MODEL FOR CIRCUIT SIMULATION

Authors
JOARDAR K GULLAPALLI KK MCANDREW CC BURNHAM ME WILD A
Citation
K. Joardar et al., AN IMPROVED MOSFET MODEL FOR CIRCUIT SIMULATION, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 134-148
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
134 - 148
Database
ISI
SICI code
0018-9383(1998)45:1<134:AIMMFC>2.0.ZU;2-K
Abstract
Problems that have continued to remain in some of the recently publish ed MOSFET compact models are demonstrated in this paper. Of particular interest are discontinuities observed in these models at the boundary between forward and reverse mode operation, A new MOSFET model is pre sented that overcomes the errors present in state-of-the-art models, C omparison with measured data is also presented to validate the new mod el.