INVESTIGATION OF A MULTIGIGAHERTZ MOSFET AMPLIFIER WITH AN ON-CHIP INDUCTOR FABRICATED ON A SIMOX WAFER

This paper describes a technology that can be used to integrate multig igahertz RF circuits into large-scale digital circuits, Spiral inducto rs and a MOSFET amplifier with an inductive load were fabricated on a SIMOX wafer in order to demonstrate the feasibility of SOI technology, With a 1-V supply voltage, peaking of the amplifier gain was observed , as expected from circuit simulations, at 1-4 GHz. These results show that RF circuits with inductors can be implemented on a SIMOX wafer b y using the conventional digital CMOS LSI process.