A NUMERICAL-ANALYSIS OF THE STORAGE TIMES OF DYNAMIC RANDOM-ACCESS MEMORY CELLS INCORPORATING ULTRATHIN DIELECTRICS

A numerical simulation of the dynamic random-access memory (DRAM) cell which incorporates leakage currents through the capacitor is presente d, As a DRAM cell capacitor dielectric is made thinner, the storage ti me becomes longer; but at some thickness, leakage currents through the dielectric will become significant, and further reductions in thickne ss will shorten storage time. The dominant leakage mechanism for a cap acitor with thin SiO2 as an insulator is direct tunneling., For Si3N4, even moderate thicknesses exhibit the low-field hopping and the high- field Poole-Frenkel conduction, The simulation shows that the dielectr ic thickness that pro,ides the maximum storage time at a given elevate d temperature exhibits significant leakage at room temperature, but th e maximum storage time can be achieved as long as the high-temperature junction leakage is larger than the dielectric leakage, The maximum s torage time values are obtained with an SiO2 thickness of about 3.8 mm or a Si3N4 thickness Of about 3.5 nm.