S. Sheu et al., A NEW APPROACH FOR SPICE SIMULATION OF ALGAAS GAAS HBT SUBJECTED TO BURN-IN TEST/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 326-329
A new approach for extracting the parameters of the AlGaAs/GaAs hetero
junction bipolar transistor (HBT) subjected to the electrical/thermal
stress test (i.e., burn-in test) is presented. Such an approach is imp
lemented into SPICE, thus allowing the simulations of the performance
of post-burn-in HBT circuits. Steady-state, frequency, and transient r
esponses of an HBT differential amplifier are simulated using the pres
ent HBT SPICE model. Results simulated from a two-dimensional (2-D) de
vice simulator are also included in support of the model.