A NEW APPROACH FOR SPICE SIMULATION OF ALGAAS GAAS HBT SUBJECTED TO BURN-IN TEST/

Authors
SHEU S LIOU JJ HUANG CI
Citation
S. Sheu et al., A NEW APPROACH FOR SPICE SIMULATION OF ALGAAS GAAS HBT SUBJECTED TO BURN-IN TEST/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 326-329
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
326 - 329
Database
ISI
SICI code
0018-9383(1998)45:1<326:ANAFSS>2.0.ZU;2-D
Abstract
A new approach for extracting the parameters of the AlGaAs/GaAs hetero junction bipolar transistor (HBT) subjected to the electrical/thermal stress test (i.e., burn-in test) is presented. Such an approach is imp lemented into SPICE, thus allowing the simulations of the performance of post-burn-in HBT circuits. Steady-state, frequency, and transient r esponses of an HBT differential amplifier are simulated using the pres ent HBT SPICE model. Results simulated from a two-dimensional (2-D) de vice simulator are also included in support of the model.