A. Gaci et al., SPACE-CHARGE GENERATION-RECOMBINATION CURRENT IN AN ABRUPT P-N-JUNCTION SUBJECTED TO SMALL BIAS VOLTAGE, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 331-334
A new modeling is proposed for the space-charge generation-recombinati
on current in a P-N junction, based on the Boltzmann statistics and by
accounting for the free carriers in the space-charge region (SCR), Th
is model, which does not necessitate the knowledge of the x-variation
of the potential in the SCR, is shown to provide more accurate results
than those furnished by the available models and the corresponding mo
del used in SPICE. The proposed model can be easily incorporated in th
e P-N junction characterization of SPICE or any other similar circuit
simulator.