INFLUENCE OF PROFILE SHAPE FACTORS ON INTRINSIC SI-MESFET DEVICE CAPACITANCES UNDER DIFFUSION MECHANISM

Authors
RAJESH S THOMAS C GUPTA RS
Citation
S. Rajesh et al., INFLUENCE OF PROFILE SHAPE FACTORS ON INTRINSIC SI-MESFET DEVICE CAPACITANCES UNDER DIFFUSION MECHANISM, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 334-336
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
334 - 336
Database
ISI
SICI code
0018-9383(1998)45:1<334:IOPSFO>2.0.ZU;2-9
Abstract
An accurate model for the device capacitances of ion-implanted MESFET using Pearson Distribution annealing is reported. The effects of profi le shape factors on the intrinsic gate-source and gate-drain capacitan ces are analyzed in the pre-and post-anneal conditions. An established reduction in capacitances with pearson's higher moments approach lead s to optimization of devices performances.