S. Gorantla et al., A MODEL FOR THERMAL GROWTH OF ULTRATHIN SILICON DIOXIDE IN O-2 AMBIENT - A RATE-EQUATION APPROACH, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 336-338
A new thermal oxidation model based on a rate equation approach with c
oncentration dependent diffusion coefficient is proposed for ultrathin
SiO2 for thicknesses of the order of 100 Angstrom. The oxidation reac
tion of silicon is assumed to be dependent on the concentrations of un
reacted silicon and oxy-gen. The results of oxide thickness versus oxi
dation time for various growth conditions and activation energies for
diffusion coefficients are in agreement with various experimental data
for O-2 ambient.