A MODEL FOR THERMAL GROWTH OF ULTRATHIN SILICON DIOXIDE IN O-2 AMBIENT - A RATE-EQUATION APPROACH

Authors
GORANTLA S MUTHUVENKATRAMAN S VENKAT R
Citation
S. Gorantla et al., A MODEL FOR THERMAL GROWTH OF ULTRATHIN SILICON DIOXIDE IN O-2 AMBIENT - A RATE-EQUATION APPROACH, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 336-338
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
336 - 338
Database
ISI
SICI code
0018-9383(1998)45:1<336:AMFTGO>2.0.ZU;2-R
Abstract
A new thermal oxidation model based on a rate equation approach with c oncentration dependent diffusion coefficient is proposed for ultrathin SiO2 for thicknesses of the order of 100 Angstrom. The oxidation reac tion of silicon is assumed to be dependent on the concentrations of un reacted silicon and oxy-gen. The results of oxide thickness versus oxi dation time for various growth conditions and activation energies for diffusion coefficients are in agreement with various experimental data for O-2 ambient.