KINK-FREE CHARACTERISTICS OF ALSB INAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH PLANAR SI DOPING BENEATH THE CHANNEL/

Authors
ZHAO Y JURKOVIC MJ WANG WI
Citation
Y. Zhao et al., KINK-FREE CHARACTERISTICS OF ALSB INAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH PLANAR SI DOPING BENEATH THE CHANNEL/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 341-342
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
341 - 342
Database
ISI
SICI code
0018-9383(1998)45:1<341:KCOAIH>2.0.ZU;2-5
Abstract
AlSb/InAs n-channel inverted-structure high electron mobility transist ors (i-HERIT's) are realized by incorporating a Si doping sheet into a thin InAs Layer that is embedded within the lower AlSb barrier. i-HEM T's with a 1 mu m x 25 mu m gate size exhibit kink-free operation at r oom temperature with high drain current, high extrinsic transconductan ce, and ion gate leakage. Results indicate potential for use in high-s peed applications.