MODELING OF GATE LINE DELAY IN VERY LARGE ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS

Citation
Q. Zhang et al., MODELING OF GATE LINE DELAY IN VERY LARGE ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 343-345
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
343 - 345
Database
ISI
SICI code
0018-9383(1998)45:1<343:MOGLDI>2.0.ZU;2-G
Abstract
With standard inverted-staggered amorphous silicon based TFT's, the si ze of active matrix liquid crystal displays is restricted by the RC ti me constant of the gate conductor. This RC delay can be reduced consid erably by connecting the gate line through via holes to a bus run on t he hack side of the substrate. We use the SPICE model to examine the r elationship between the RC delay and all important circuit parameters. The results show that with a low-resistance hack line and only a few via holes per line, the delay can be reduced by nearly a factor of ten .