IMAGE DECONVOLUTION FOR DEFECTED CRYSTALS IN FIELD-EMISSION HIGH-RESOLUTION ELECTRON-MICROSCOPY

It is demonstrated that for images taken with a field-emission high-re solution electron microscope the image deconvolution based on the weak -phase object approximation is available for restoring the crystal def ects with the resolution close to the information resolution limit. Th e image deconvolution is firstly carried out for simulated [110] image s of perfect and defect Si crystal structure models with different thi ckness. The deconvoluted images reveal the atomic pairs as black dumbb ells and show the correct atomic configuration including that at the t win boundary and near the 60 degrees dislocation core for the crystal thickness at least up to 76 Angstrom. An experimental [110] image of S iGe/Si has been restored to reveal an extended stacking fault sandwich ed between two partial dislocations at the atomic level.