HIGH-RATE GAN EPITAXIAL-GROWTH BY SUBLIMATION SANDWICH METHOD

Thick GaN epitaxial layers were grown by the sublimation ''sandwich me thod'' (SSM) on SiC substrates at temperatures from 1100 degrees C to 1250 degrees C in ammonia flow. Metallic Ga or GaN powder was used as the vapor source. The possibility of growing of munocrystalline GaN la yers with growth rates as high as 1 mm/h was demonstrated. The depende nce of the growth kinetics on temperature, source to substrate distanc e and input ammonia Bow rare was studied. Various characterization tec hniques show the high quality of the GaN layers.