STUDY OF GESI ALLOY DEPOSITION ON GE SUBSTRATE BY VERY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Authors
GU SL WANG RH JIANG N ZHU SM ZHANG R SHI Y HU LQ ZHENG YD
Citation
Sl. Gu et al., STUDY OF GESI ALLOY DEPOSITION ON GE SUBSTRATE BY VERY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 183(1-2), 1998, pp. 117-123
Citations number
18
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
183
Issue
1-2
Year of publication
1998
Pages
117 - 123
Database
ISI
SICI code
0022-0248(1998)183:1-2<117:SOGADO>2.0.ZU;2-4
Abstract
We have studied the GeSi alloy deposition on Ge substrate by rapid the rmal process, very low-pressure CVD method. The growth rate of the GeS i alloy increases with increasing the Si composition at a proper tempe rature. The high substrate temperature will cause the Si fraction and the GeSi growth rare to increase. Kinetics study of very low-pressure chemical vapor deposition has been used to discuss these results.