INITIAL-STAGE OF SIC GROWTH ON SI(100) SURFACE

The growth of SiC film by exposing Si(100) surface to C2H4 gas at samp le temperature of 700 degrees C was examined using reflection high-ene rgy electron diffraction (RHEED), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From the dependence of the RHEED patterns on C2H4, exposure, a continuous shift of the lattice c onstant of SIC film during the growth was indicated. The width of the SiC(10) spot was very broad, which suggests that there is a dispersion of length between atoms in SIC islands. The surface morphology at the initial stage of the film growth was also observed by SEM.